Correlation between electrical conductivity and manufacturing processes of nanofilled carbon fiber reinforced composites

This paper describes the difference on the electrical performance of carbon fiber reinforced composites (CFRCs) when two different Resin Film Infusion (RFI) manufacturing techniques are used. For the panel obtained by bulk infusion the measured in plane and out of plane electrical conductivities were 2.0 × 10⁴ S/m and 3.9 S/m respectively and for the panel prepared using the traditional resin film infusion the values were 1.1 × 10⁴ S/m and 1.7 S/m respectively. Morphological investigations on the sections of etched panels have highlighted that this difference in the electrical conductivity was strictly related to the different distribution of multiwall carbon nanotubes (MWCNTs) between the carbon fibers (CFs) of the plies.     

Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

Electrochemical growth of tin(II) oxide films: Application in photocatalytic degradation of methylene blue

We have investigated the semiconducting and photoelectrochemical properties of SnO films grown potentiostatically on tin substrate. The oxide is characterized by X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The anodic process corresponds to the formation of SnO·nH₂O pre-passive layer that is removed upon increasing potential due to surface etching at the metal/oxide interface. SnO films deposited for long durations (>50 mn) are uniform and well adhered; they thicken up to ~50 nm by diffusion-controlled process and the growth follows a direct logarithmic law. The thickness is determined by coulometry and the X-ray diffraction indicates the tetragonal SnO phase (SG: P4/mmm) with a crystallite size of 32 nm. The Mott–Schottky plot is characteristic of n type conductivity with an electrons density of 5.72×10¹⁸ cm⁻³, a flat band potential of −0.09 V_SCE and a depletion width of ~10 nm. The valence band, located at 5.91 eV below, vacuum is made up of hybridized O²⁻:2p Sn²⁺:5s while the conduction band (4.45 eV) derives from Sn²⁺:5p orbital. The electrochemical impedance spectroscopy (EIS) measured in the range (10⁻²–10⁵ Hz) shows the contribution of the bulk and grain boundaries. The energy band diagram predicts the photodegradation of methylene blue on SnO films. 67% of the initial concentration (10 mg L⁻¹) disappears after 3 h of exposure to visible light (9 mW cm⁻²) with a quantum yield of 0.072.     

Assessing the width of Gaussian density of states in organic semiconductors

The Density of States (DOS) is an ingredient of critical importance for the accurate physical understanding of the optoelectronic properties of organic semiconductors. The disordered nature of this class of materials, though, renders the task of determining the DOS far from trivial. Its extraction from experimental measurements is often performed by driving the semiconductor out of thermal equilibrium and therefore requires making assumptions on the charge transport properties of the material under examination. This entanglement of DOS and charge transport models is unfavorable since transport mechanisms in organic semiconductors are themselves still subject of debate. To avoid this, we propose an alternative approach which is based on populating and probing the DOS by means of capacitive coupling in Metal Insulator Semiconductors (MIS) structures while keeping the semiconductor in thermal equilibrium. Assuming a Gaussian shape, we extract the DOS width by numerical fitting of experimental Capacitance–Voltage curves, exploiting the fact that the DOS width affects the spatial distribution of accumulated charge carriers which in turn concurs to define the MIS capacitance. The proposed approach is successfully tested on two benchmark semiconducting polymers, one of n-type and one of p-type and it is validated by verifying the robustness of the extraction procedure with respect to varying the insulator electrical permittivity. Finally, as an example of the usefulness and effectiveness of our approach, we study the static characteristics of thin film transistors based on the aforementioned polymers in the framework of the Extended Gaussian Disorder transport model. Thanks to the extracted DOS widths, the functional dependence of current on the gate voltage is nicely predicted and physical insight on transistor operation is achieved.     

Preparation and characterization of polynorbornene/sepiolite hybrid nanocomposite films

Polynorbornene/sepiolite hybrid nanocomposite films were prepared using polynorbornene dicarboximide and modified sepiolite with 3‐ aminopropyltriethoxysilane (3‐APTES). Exo‐N‐(3,5‐dichlorophenylnorbornene)‐5,6‐dicarboxyimide (monomer) and their copolymers were synthesized via ring‐opening polymerization using ruthenium catalysts. Subsequently, the surface‐modified sepiolite by 3‐APTES was mixed with the polynorbornene copolymers to prepare hybrid nanocomposite films. The modified sepiolite particles were well dispersed in N,N‐dimethylacetamide and distributed randomly throughout the polynorbornene matrix in the hybrid films, which enhanced the dimensional stability and mechanical and oxygen barrier properties of the polynorbornene/sepiolite hybrid nanocomposite films. © 2014 Society of Chemical Industry     

Effects of the film thickness and poling electric field on photovoltaic performances of (Pb,La)(Zr,Ti)O3 ferroelectric thin film-based devices

The ferroelectric photovoltaic (FPV) effect obtained in inorganic perovskite ferroelectric materials has received much attention because of its large potential in preparing FPV devices with superior stability, high open-circuit voltage (V_oc) and large short-circuit current density (J_sc). In order to obtain suitable thickness for the ferroelectric thin film as light absorption layer, in which, the sunlight can be fully absorbed and the photo-generated electrons and holes are recombined as few as possible, we prepare Pb_0.93La_0.07(Zr_0.6Ti_0.4)_0.9825O₃ (PLZT) ferroelectric thin films with different layer numbers by the sol-gel method and based on these thin films, obtain FPV devices with FTO/PLZT/Au structure. By measuring photovoltaic properties, it is found that the device with 4 layer-PLZT thin film (~300 nm thickness) exhibits the largest V_oc and J_sc and the photovoltaic effect obviously depends on the value and direction of the poling electric field. When the device is applied a negative poling electric field, both the V_oc and J_sc are significantly higher than those of the device applied the positive poling electric field, due to the depolarization field resulting from the remnant polarization in the same direction with the built-in electric field induced by the Schottky barrier, and the higher the negative poling electric field, the larger the V_oc and J_sc. At a -333 kV/cm poling electric field, the FPV device exhibits the most superior photovoltaic properties with a V_oc of as high as 0.73 V and J_sc of as large as 2.11 μA/cm². This work opens a new way for developing ferroelectric photovoltaic devices with good properties.     

醇脱氢酶在聚乙烯膜表面的固定化研究

以聚丙烯酸（PAA）改性的聚乙烯（PE）膜为载体，研究了醇脱氢酶（ADH）的两种固定化路线，并以甲醛为底物考察了固定化酶的催化性能。路线1用聚乙烯亚胺（PEI）进一步改性，使用戊二醛（GA）固定化ADH。最优固定化pH为6.0，温度为5～15℃，酶浓度为1.0 mg/ml，GA浓度为0.01%(质量)；固定化酶的最适反应pH为6.5，温度为15～30℃，反应速率最高为9.6 μmol/(L·min)；重复利用10次后可保持47.3%的活性。路线2以PAA-PE为载体，用1-(3-二甲氨基丙基)-2-乙基碳二亚胺盐酸盐（EDC）和N-羟基琥珀酰亚胺（NHS）为活化剂，固定化ADH。EDC和NHS最优摩尔比为1∶0.5，固定化时间为24 h；固定化酶的最适反应pH为6.5，温度为20～37℃，反应速率为15.58 μmol/(L·min)；重复利用10次后可保持53.8%的活性。     

Development of cellulose nanofibrils reinforced polyvinyl alcohol films incorporated with alizarin for intelligent food packaging

Visual pH-sensing films were fabricated using cellulose nanofibrils (CNF) reinforced polyvinyl alcohol (PVA) and alizarin. The relationships between the ratio of PVA: CNF hydrogel (2:1, 1:1, 1:2) and the physical properties and colour response efficiency of indicator films were investigated. Fourier transform infrared spectroscopy of films evidenced alizarin and CNF was properly incorporated by physical interaction. A new weak X-ray diffraction peak appeared at 2θ = 22.4°, which was affected by the incorporation of CNF. The increase in the CNF content induced enhancements of thermal stability, tensile strength, water contact angle and colour sensitivity of the indicator films. The colourimetric films had a higher sensitivity to discolouration when exposed to acidic vapours than alkaline vapours. The films presented a remarkable colour change varied from purple in alkaline condition to yellow in acidic condition. Therefore, this colourimetric film can be used as a volatile acid sensor for intelligent packaging.     

YSZ/MoS2 self-lubricating coating fabricated by thermal spraying and hydrothermal reaction

Thermal sprayed ceramic coatings have extensively been used in components to protect them against friction and wear. However, the poor lubricating ability severely limits their application. Herein, yttria-stabilized zirconia (YSZ)/MoS₂ composite coatings were successfully fabricated on steel substrate with the combination of thermal spraying technology and hydrothermal reaction. Results show that the synthetic MoS₂ powders are composed of numbers of ultra-thin sheets (about 7 ~ 8?nm), and the sheet has obvious lamellar structure. After vacuum impregnation and hydrothermal reaction, numbers of MoS₂ powders, look like flowers, generate inside the plasma sprayed YSZ coating. Moreover, the growing point of the MoS₂ flower is the intrinsic micro-pores of YSZ coating. The friction and wear tests under high vacuum environment indicate that the composite coating has an extremely long lifetime (>?100,000 cycles) and possesses a low friction coefficient less than 0.1, which is lower by about 0.15 times than that of YSZ coating. Meanwhile, the composite shows an extremely low wear rate (2.30?×?10^?7 mm³ N^?1 m^?1) and causes slight wear damage to the counterpart. The excellent lubricant and wear-resistant ability are attributed to the formation of MoS₂ transfer films and the ultra-smooth of the worn surfaces of hybrid coatings.     

Reversible,repeatable and low phase transition behaviour of spin coated nanostructured vanadium oxide thin films with superior mechanical properties

Smooth, uniform and crystalline vanadium oxide thin films were deposited on quartz by spin coating technique with four different rpm i.e., 1000, 2000, 3000 and 4000 and subsequently post annealed at 350, 450 and 550?°C in vacuum. Transmission electron microscopy (TEM), Field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) techniques were utilized for microstructural characterizations and phase analysis, respectively, for vanadium oxide powder and deposited film. Nanorods were observed to be grown after vacuum annealing. X-ray photoelectron spectroscopy (XPS) technique was utilized to study the elemental oxidation state of deposited vanadium oxide films. Thermo-optical and electrical properties such as solar transmittance (τ_s), reflectance (ρ_s), absorptance (α_s), infrared (IR) emittance (ε_ir) and sheet resistance (R_s) of different thin films were evaluated. Based on the optical characteristics the optimized condition of the film processing was identified to be spin coated at 3000?rpm. Subsequently, the nanoindentation technique was utilized to measure hardness and Young's modulus of the optimized film. The measured nanomechanical properties were found to be superior to those reported for sputtered vanadium oxide films. Finally, temperature dependent phase transition characteristics of optimized vanadium oxide films were studied by differential scanning calorimetry (DSC) technique. Reversible and repeatable phase transition was found to occur in the range of 44–48?°C which was significantly lower than the phase transition temperature (i.e., 68?°C) of bulk VO₂.